{
  "annotation_id": "fa6e7c09-22ec-4ae7-bf3c-c5ceaa441b5f",
  "date_created": "2026-03-02T18:02:50.820000Z",
  "date_modified": "2026-03-02T18:02:50.820000Z",
  "file_hash": "fe7c7f7adb43ed86f0856ef201e33269a55ab496a72a862e7c12582ccd2ee572",
  "private": false,
  "record": {
    "abstract": "A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs)\nbased on a Ginzburg-Landau free energy expression whose parameters are field-\nand spatially- dependent is developed. This model is used to explain\nexperimental data on JoFETs made by the hole-overdoped Ca-SBCO bicrystal\njunctions (three terminal devices). The measurements showed a large modulation\nof the critical current as a function of the applied voltage due to charge\nmodulation in the bicrystal junction. The experimental data agree with the\nsolutions of the theoretical model. This provides an explanation of the large\nfield effect, based on the strong suppresion of the carrier density near the\ngrain boundary junction in the absence of applied field and the subsequent\nmodulation of the density by the field.",
    "arxiv_id": "supr-con/9607002",
    "authors": [
      "J. J. Betouras",
      "R. Joynt",
      "Z. -W. Dong",
      "T. Venkatesan",
      "P. Hadley"
    ],
    "categories": [
      "supr-con",
      "cond-mat.supr-con"
    ],
    "doi": "10.1063/1.117661",
    "title": "Ginzburg-Landau Theory of Josephson Field Effect Transistors",
    "url": "https://arxiv.org/abs/supr-con/9607002"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "cd6dc2ba-1c31-4ac5-8753-19f33815e73b",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}