dorsal/arxiv
View SchemaProperties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors
| Authors | Aleksey E. Bolotnikov, Steven E. Boggs, C. M. Hubert Chen, Walter R. Cook, Fiona A. Harrison, Stephen M. Schindler |
|---|---|
| Categories | |
| ArXiv ID | physics/0103005 |
| URL | https://arxiv.org/abs/physics/0103005 |
| DOI | 10.1016/S0168-9002(01)01506-6 |
| Journal | Nucl.Instrum.Meth. A482 (2002) 395-407 |
Abstract
In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.
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"abstract": "In this paper we present studies of the I-V characteristics of CdZnTe\ndetectors with Pt contacts fabricated from high-resistivity single crystals\ngrown by the high-pressure Brigman process. We have analyzed the experimental\nI-V curves using a model that approximates the CZT detector as a system\nconsisting of a reversed Schottky contact in series with the bulk resistance.\nLeast square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT\nSchottky barrier height, and \u003c20 V for the voltage required to deplete a 2 mm\nthick CZT detector. We demonstrate that at high bias the thermionic current\nover the Schottky barrier, the height of which is reduced due to an interfacial\nlayer between the contact and CZT material, controls the leakage current of the\ndetectors. In many cases the dark current is not determined by the resistivity\nof the bulk material, but rather the properties of the contacts; namely by the\ninterfacial layer between the contact and CZT material.",
"arxiv_id": "physics/0103005",
"authors": [
"Aleksey E. Bolotnikov",
"Steven E. Boggs",
"C. M. Hubert Chen",
"Walter R. Cook",
"Fiona A. Harrison",
"Stephen M. Schindler"
],
"categories": [
"physics.ins-det"
],
"doi": "10.1016/S0168-9002(01)01506-6",
"journal_ref": "Nucl.Instrum.Meth. A482 (2002) 395-407",
"title": "Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors",
"url": "https://arxiv.org/abs/physics/0103005"
},
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