{
  "annotation_id": "e218fb0e-42ad-4670-b0ce-376380ab5d49",
  "date_created": "2026-03-02T18:00:47.022000Z",
  "date_modified": "2026-03-02T18:00:47.022000Z",
  "file_hash": "bf27cfab7c90a48b93f34b67a86ac0353b2de99ab4252784dde06e3796bf8c08",
  "private": false,
  "record": {
    "abstract": "This paper reports on the sensor R\u0026D activity for the CMS pixel detector.\nDevices featuring several design and technology options have been irradiated up\nto a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were\nbump bonded to unirradiated readout chips and tested using high energy pions in\nthe H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed\nfull analogue readout and therefore a good characterization of the sensors in\nterms of noise and charge collection properties. The position dependence of\nsignal is presented and the differences between the two sensor options are\ndiscussed.",
    "arxiv_id": "physics/0312009",
    "authors": [
      "T. Rohe",
      "D. Bortoletto",
      "V. Chiochia",
      "L. M. Cremaldi",
      "S. Cucciarelli",
      "A. Dorokhov",
      "M. Konecki",
      "K. Prokofiev",
      "C. Regenfus",
      "D. A. Sanders",
      "S. Son",
      "T. Speer",
      "M. Swartz"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1109/TNS.2004.829487",
    "journal_ref": "IEEE Trans.Nucl.Sci.51:1150-1157,2004",
    "title": "Position Dependence of Charge Collection in Prototype Sensors for the   CMS Pixel Detector",
    "url": "https://arxiv.org/abs/physics/0312009"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "11e9b83e-ac64-4106-8f4d-cdfd5d68fa4f",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}