dorsal/arxiv
View SchemaQuantum Langevin equations for semiconductor light-emitting devices and the photon statistics at a low-injection level
| Authors | Hiroshi Fujisaki, Akira Shimizu |
|---|---|
| Categories | |
| ArXiv ID | quant-ph/9804051 |
| URL | https://arxiv.org/abs/quant-ph/9804051 |
| DOI | 10.1103/PhysRevA.57.3074 |
| Journal | Phys.Rev. A57 (1998) 3074 |
Abstract
From the microscopic quantum Langevin equations (QLEs) we derive the effective semiconductor QLEs and the associated noise correlations which are valid at a low-injection level and in real devices. Applying the semiconductor QLEs to semiconductor light-emitting devices (LEDs), we obtain a new formula for the Fano factor of photons which gives the photon-number statistics as a function of the pump statistics and several parameters of LEDs. Key ingredients are non-radiative processes, carrier-number dependence of the radiative and non-radiative lifetimes, and multimodeness of LEDs. The formula is applicable to the actual cases where the quantum efficiency $\eta$ differs from the differential quantum efficiency $\eta_{d}$, whereas previous theories implicitly assumed $\eta = \eta_{d}$. It is also applicable to the cases when photons in each mode of the cavity are emitted and/or detected inhomogeneously. When $\eta_{d} < \eta$ at a running point, in particular, our formula predicts that even a Poissonian pump can produce sub-Poissonian light. This mechanism for generation of sub-Poissonian light is completely different from those of previous theories, which assumed sub-Poissonian statistics for the current injected into the active layers of LEDs. Our results agree with recent experiments. We also discuss frequency dependence of the photon statistics.
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"abstract": "From the microscopic quantum Langevin equations (QLEs) we derive the\neffective semiconductor QLEs and the associated noise correlations which are\nvalid at a low-injection level and in real devices. Applying the semiconductor\nQLEs to semiconductor light-emitting devices (LEDs), we obtain a new formula\nfor the Fano factor of photons which gives the photon-number statistics as a\nfunction of the pump statistics and several parameters of LEDs. Key ingredients\nare non-radiative processes, carrier-number dependence of the radiative and\nnon-radiative lifetimes, and multimodeness of LEDs. The formula is applicable\nto the actual cases where the quantum efficiency $\\eta$ differs from the\ndifferential quantum efficiency $\\eta_{d}$, whereas previous theories\nimplicitly assumed $\\eta = \\eta_{d}$. It is also applicable to the cases when\nphotons in each mode of the cavity are emitted and/or detected inhomogeneously.\nWhen $\\eta_{d} \u003c \\eta$ at a running point, in particular, our formula predicts\nthat even a Poissonian pump can produce sub-Poissonian light. This mechanism\nfor generation of sub-Poissonian light is completely different from those of\nprevious theories, which assumed sub-Poissonian statistics for the current\ninjected into the active layers of LEDs. Our results agree with recent\nexperiments. We also discuss frequency dependence of the photon statistics.",
"arxiv_id": "quant-ph/9804051",
"authors": [
"Hiroshi Fujisaki",
"Akira Shimizu"
],
"categories": [
"quant-ph"
],
"doi": "10.1103/PhysRevA.57.3074",
"journal_ref": "Phys.Rev. A57 (1998) 3074",
"title": "Quantum Langevin equations for semiconductor light-emitting devices and the photon statistics at a low-injection level",
"url": "https://arxiv.org/abs/quant-ph/9804051"
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