{
  "annotation_id": "d6da911d-1ec3-4ade-a5ca-f2c393afb2e1",
  "date_created": "2026-03-02T18:02:10.391000Z",
  "date_modified": "2026-03-02T18:02:10.391000Z",
  "file_hash": "3cca08417059d0ba3207f1ac26eb66f9b87d0794de76fc85f353253986887dfb",
  "private": false,
  "record": {
    "abstract": "There has been considerable progress in electro-statically emptying, and\nre-filling, quantum dots with individual electrons. Typically the quantum dot\nis defined by electrostatic gates on a GaAs/AlGaAs modulation doped\nheterostructure. We report the filling of such a quantum dot by a single\nphoto-electron, originating from an individual photon. The electrostatic dot\ncan be emptied and reset in a controlled fashion before the arrival of each\nphoton. The trapped photo-electron is detected by a point contact transistor\nintegrated adjacent to the electrostatic potential trap. Each stored\nphoto-electron causes a persistent negative step in the transistor channel\ncurrent. Such a controllable, benign, single photo-electron detector could\nallow for information transfer between flying photon qubits and stored electron\nqubits.",
    "arxiv_id": "quant-ph/0410094",
    "authors": [
      "Deepak Sethu Rao",
      "Thomas Szkopek",
      "Hans Daniel Robinson",
      "Eli Yablonovitch",
      "Hong-Wen Jiang"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1063/1.2134888",
    "journal_ref": "J. Appl. Phys. 98, 114507 (2005)",
    "title": "Single photo-electron trapping, storage, and detection in a one-electron   quantum dot",
    "url": "https://arxiv.org/abs/quant-ph/0410094"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "a9f13e82-e9e4-4626-b427-f091a80ac59b",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}