dorsal/arxiv
View SchemaRadiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
| Authors | E. Fretwurst, G. Lindstrom, I. Pintilie, J. Stahl |
|---|---|
| Categories | |
| ArXiv ID | physics/0211118 |
| URL | https://arxiv.org/abs/physics/0211118 |
Abstract
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage including also defects introduced either by processing steps or being inherent to the as grown silicon. However the focus is on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work.
{
"annotation_id": "d5c51123-18d1-4d5d-874b-145df8d4d07b",
"date_created": "2026-03-02T18:00:42.205000Z",
"date_modified": "2026-03-02T18:00:42.205000Z",
"file_hash": "4e698a95692ff08599678132cbcb7524a2162ebf570d8c881c1f12cd7ba2a3ad",
"private": false,
"record": {
"abstract": "The report contains various aspects of radiation damage in silicon detectors\nsubjected to high intensity hadron and electromagnetic irradiation. It focuses\non improvements for the foreseen LHC applications, employing oxygenation of\nsilicon wafers during detector processing (result from CERN-RD48). An updated\nsurvey on hadron induced damage is given in the first article. Several\nimprovements are outlined especially with respect to antiannealing problems\nassociated with detector storage during LHC maintenance periods. Open questions\nare outlined in the final section, among which are a full understanding of\ndifferences found between proton and neutron induced damage, process related\neffects changing the radiation tolerance in addition to the oxygen content and\nthe lack of understanding the changed detector properties on the basis of\ndamage induced point and cluster defects. In addition to float zone silicon, so\nfar entirely used for detector fabrication,Czochralski silicon was also studied\nand first promising results are shown. The other three papers deal with gamma\ninduced damage including also defects introduced either by processing steps or\nbeing inherent to the as grown silicon. However the focus is on measurements\nafter gamma irradiation in a wide dose range. Both the changes in detector\nproperties and defect characterisations have been studied. For the first time\nit is shown that in contrast to a standard process oxygenated silicon detectors\nwithstand an irradiation dose of up to 1 Grad with only minor deterioration.\nAlso it is shown for the first time that in this case the detector properties\ncan directly be explained by the damage induced point defects. This 1:1\ncorrelation is extremely promising for all future defect engineering work.",
"arxiv_id": "physics/0211118",
"authors": [
"E. Fretwurst",
"G. Lindstrom",
"I. Pintilie",
"J. Stahl"
],
"categories": [
"physics.ins-det"
],
"title": "Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation",
"url": "https://arxiv.org/abs/physics/0211118"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "a755c5bb-5646-46ab-bf02-4d5d6cd7ba08",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}