{
  "annotation_id": "d4633fba-c6d0-4af9-afe8-00971cae3afb",
  "date_created": "2026-03-02T18:01:14.459000Z",
  "date_modified": "2026-03-02T18:01:14.459000Z",
  "file_hash": "7607da729274aaea5789dc4172e5e4a75ac271eccfdabe73525d0d7a780b222d",
  "private": false,
  "record": {
    "abstract": "the realization of high repetition rate passively Q-switched monolithic\nmicrolaser is a challenge since a decade. To achieve this goal, we report here\non the first passively Q-switched diode-pumped microchip laser based on the\nassociation of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The\nmonolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted\non a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as\nhigh as 85 kHz is achieved. The average output power is approximately 400 mW\nfor 2.2 W of absorbed pump power and the pulse length is 1.1 ns.",
    "arxiv_id": "physics/0609255",
    "authors": [
      "Sebastien Forget",
      "Frederic Druon",
      "Francois Balembois",
      "Patrick Georges",
      "Nicolas Landru",
      "Jean Philippe Feve",
      "Jiali Lin",
      "Zhiming Weng"
    ],
    "categories": [
      "physics.optics"
    ],
    "doi": "10.1016/j.optcom.2005.09.053",
    "journal_ref": "Optics Communications 259 (2006) 816-819",
    "title": "Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic   microchip laser",
    "url": "https://arxiv.org/abs/physics/0609255"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "64859c93-1542-4041-88e5-145979ec03d2",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}