{
  "annotation_id": "c79dfd63-e90b-4b8c-a639-bb8d306574c4",
  "date_created": "2026-03-02T18:00:39.773000Z",
  "date_modified": "2026-03-02T18:00:39.773000Z",
  "file_hash": "4fe9715227c02570936a9827534594f73e9dff43dc9479c6d4fc9833dd3b5c38",
  "private": false,
  "record": {
    "abstract": "Ga-rich GaAs (001) surfaces are successfully observed during high-temperature\nannealing by scanning tunneling microscopy (STM). With a substrate temperature\nof 550 C, reflection high-energy diffraction patterns and reflectance\nanisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly\nshow alteration of the surface reconstructions while scanning. It is postulated\nthat detaching and attaching of Ga adatoms may be the cause of these surface\ndynamics. For these conditions it is determined that zeta(4x4), zeta2(4x4) and\nzeta(4x6) reconstructions co-exist on the surface. The zeta2(4x4)\nreconstruction contains a Ga tetramer cluster and in more Ga-rich conditions,\nthe zeta2(4x6) surface has a Ga octamer cluster.",
    "arxiv_id": "physics/0201060",
    "authors": [
      "Shiro Tsukamoto",
      "Markus Pristovsek",
      "Bradford G. Orr",
      "Akihiro Ohtake",
      "Gavin R. Bell",
      "Nobuyuki Koguchi"
    ],
    "categories": [
      "physics.atm-clus",
      "physics.chem-ph"
    ],
    "title": "Ga-rich GaAs(001) surfaces observed during high-temperature annealing by   scanning tunneling microscopy",
    "url": "https://arxiv.org/abs/physics/0201060"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "cc00156d-566f-4816-be27-97ebb978c9d5",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}