{
  "annotation_id": "c48710a3-bab1-457f-a4f0-f21aa45b0e98",
  "date_created": "2026-03-02T18:02:33.984000Z",
  "date_modified": "2026-03-02T18:02:33.984000Z",
  "file_hash": "54f5dd604aef9743577db3b9602e75c237fd2af7df110ea313d499af940bdfa5",
  "private": false,
  "record": {
    "abstract": "The graphene is a native two-dimensional crystal material consisting of a\nsingle sheet of carbon atoms. In this unique one-atom-thick material, the\nelectron transport is ballistic and is described by a quantum relativistic-like\nDirac equation rather than by the Schrodinger equation. As a result, a graphene\nbarrier behaves very differently compared to a common semiconductor barrier. We\nshow that a single graphene barrier acts as a switch with a very high on-off\nratio and displays a significant differential negative resistance, which\npromotes graphene as a key material in nanoelectronics.",
    "arxiv_id": "quant-ph/0701011",
    "authors": [
      "Daniela Dragoman",
      "Mircea Dragoman"
    ],
    "categories": [
      "quant-ph"
    ],
    "title": "Negative Differential Resistance of Electrons in Graphene Barrier",
    "url": "https://arxiv.org/abs/quant-ph/0701011"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "312423a3-93a8-46e3-b8ab-6f05293a24b1",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}