{
  "annotation_id": "bacab9f7-427c-43b9-9544-a9a91f8cadd0",
  "date_created": "2026-03-02T18:00:53.579000Z",
  "date_modified": "2026-03-02T18:00:53.579000Z",
  "file_hash": "9c1a40802cc6c79f968e7b863c2c7c2440e3aef46a4eba10060653b6fb574e19",
  "private": false,
  "record": {
    "abstract": "This paper discusses free carrier generation by pulsed laser fields as a\nmechanism to switch the optical properties of semiconductor photonic crystals\nand bulk semiconductors on an ultrafast time scale. Requirements are set for\nthe switching magnitude, the time-scale, the induced absorption as well as the\nspatial homogeneity, in particular for silicon at lambda= 1550 nm. Using a\nnonlinear absorption model, we calculate carrier depth profiles and define a\nhomogeneity length l_hom. Homogeneity length contours are visualized in a plane\nspanned by the linear and two-photon absorption coefficients. Such a\ngeneralized homogeneity plot allows us to find optimum switching conditions at\npump frequencies near v/c= 5000 cm^{-1} (lambda= 2000 nm). We discuss the\neffect of scattering in photonic crystals on the homogeneity. We experimentally\ndemonstrate a 10% refractive index switch in bulk silicon within 230 fs with a\nlateral homogeneity of more than 30 micrometers. Our results are relevant for\nswitching of modulators in absence of photonic crystals.",
    "arxiv_id": "physics/0410157",
    "authors": [
      "Tijmen G. Euser",
      "Willem L. Vos"
    ],
    "categories": [
      "physics.optics"
    ],
    "doi": "10.1063/1.1846949",
    "journal_ref": "J. Appl. Phys. 97, 043102 (2005) (7 pages)",
    "title": "Spatial homogeneity of optically switched semiconductor photonic   crystals and of bulk semiconductors",
    "url": "https://arxiv.org/abs/physics/0410157"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "63a1794d-3196-441d-bf29-603d27fc2313",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}