dorsal/arxiv
View SchemaQuantum gates by coupled quantum dots and measurement procedure in Si MOSFET
| Authors | Tetsufumi Tanamoto |
|---|---|
| Categories | |
| ArXiv ID | quant-ph/9908021 |
| URL | https://arxiv.org/abs/quant-ph/9908021 |
| DOI | 10.1016/S0921-4526(99)00344-0 |
| Journal | Physica B 272 (1999) 45 |
Abstract
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
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"abstract": "We investigated the quantum gates of coupled quantum dots, theoretically,\nwhen charging effects can be observed. We have shown that the charged states in\nthe qubits can be observed by the channel current of the MOSFET structure.",
"arxiv_id": "quant-ph/9908021",
"authors": [
"Tetsufumi Tanamoto"
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"doi": "10.1016/S0921-4526(99)00344-0",
"journal_ref": "Physica B 272 (1999) 45",
"title": "Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET",
"url": "https://arxiv.org/abs/quant-ph/9908021"
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