{
  "annotation_id": "b0cbfb6e-c4f5-4651-ae3e-05f9cdc0d4bc",
  "date_created": "2026-03-02T18:00:53.633000Z",
  "date_modified": "2026-03-02T18:00:53.633000Z",
  "file_hash": "b3ccb06d92741401294a6e99f26576cd1753681d3072e4144af61aee1b1e5695",
  "private": false,
  "record": {
    "abstract": "We have investigated the depletion voltage changes, the leakage current\nincrease and the charge collection efficiency of a silicon microstrip detector\nidentical to those used in the inner layers of the BaBar Silicon Vertex Tracker\n(SVT) after heavy non-uniform irradiation. A full SVT module with the front-end\nelectronics connected has been irradiated with a 0.9 GeV electron beam up to a\npeak fluence of 3.5 x 10^14 e^-/cm^2, well beyond the level causing substrate\ntype inversion. We irradiated one of the two sensors composing the module with\na non-uniform profile with sigma=1.4 mm that simulates the conditions\nencountered in the BaBar experiment by the modules intersecting the horizontal\nmachine plane. The position dependence of the charge collection properties and\nthe depletion voltage have been investigated in detail using a 1060 nm LED and\nan innovative measuring technique based only on the digital output of the chip.",
    "arxiv_id": "physics/0411182",
    "authors": [
      "S. Bettarini",
      "M. Bondioli",
      "L. Bosisio",
      "G. Calderini",
      "C. Campagnari",
      "S. Dittongo",
      "F. Forti",
      "M. A. Giorgi",
      "G. Marchiori",
      "G. Rizzo"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1109/TNS.2005.852666",
    "title": "Measurement of the Charge Collection Efficiency after Heavy Non-Uniform   Irradiation in BaBar Silicon Detectors",
    "url": "https://arxiv.org/abs/physics/0411182"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "3bf9d7f1-4fe0-4be5-b9cf-8b1f6254da59",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}