{
  "annotation_id": "ac84a7df-d713-4d7a-a1fe-f1be765b93bd",
  "date_created": "2026-03-02T18:02:10.066000Z",
  "date_modified": "2026-03-02T18:02:10.066000Z",
  "file_hash": "e03b8e48de13c7fe365313c7ffb2ccfb7f74adce1baef682c8dce1395e99cc5a",
  "private": false,
  "record": {
    "abstract": "Solid-state systems such as P donors in Si have considerable potential for\nrealization of scalable quantum computation. Recent experimental work in this\narea has focused on implanted Si:P double quantum dots (DQDs) that represent a\npreliminary step towards the realization of single donor charge-based qubits.\nThis paper focuses on the techniques involved in analyzing the charge transfer\nwithin such DQD devices and understanding the impact of fabrication parameters\non this process. We show that misalignment between the buried dots and surface\ngates affects the charge transfer behavior and identify some of the challenges\nposed by reducing the size of the metallic dot to the few donor regime.",
    "arxiv_id": "quant-ph/0409077",
    "authors": [
      "K. H. Lee",
      "A. D. Greentree",
      "J. P. Dinale",
      "C. C. Escott",
      "A. S. Dzurak",
      "R. G. Clark"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1088/0957-4484/16/1/016",
    "journal_ref": "Nanotechnology 16, 74-81 (2005)",
    "title": "Modeling Single Electron Transfer in Si:P Double Quantum Dots",
    "url": "https://arxiv.org/abs/quant-ph/0409077"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "d2026a42-cdd6-4ed6-a428-f3ff0fd00855",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}