dorsal/arxiv
View SchemaExpected behaviour of different semiconductor materials in hadron fields
| Authors | I. Lazanu, S. Lazanu, M. Bruzzi |
|---|---|
| Categories | |
| ArXiv ID | physics/0006054 |
| URL | https://arxiv.org/abs/physics/0006054 |
Abstract
The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic theoretical study has been performed, investigating the interaction of charged hadrons with semiconductor materials and the mechanisms of defect creation by irradiation. The mechanisms of the primary interaction of the hadron with the nucleus of the semiconductor lattice have been explicitly modelled and the Lindhard theory of the partition between ionisation and displacements has been considered. The behaviour of silicon, diamond, and some AIIIBV compounds, as GaAs, GaP, InP, InAs, InSb has been investigated. The nuclear energy loss, and the concentration of primary defects induced in the material bulk by the unit hadron fluence have been calculated. The peculiarities of the proton and pion interactions as well as the specific properties of the semiconductor material have been put in evidence.
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"abstract": "The utilisation of semiconductor materials as detectors and devices operating\nin high radiation environments, at the future particle colliders, in space\napplications or in medicine and industry, necessitates to obtain radiation\nharder materials. A systematic theoretical study has been performed,\ninvestigating the interaction of charged hadrons with semiconductor materials\nand the mechanisms of defect creation by irradiation. The mechanisms of the\nprimary interaction of the hadron with the nucleus of the semiconductor lattice\nhave been explicitly modelled and the Lindhard theory of the partition between\nionisation and displacements has been considered. The behaviour of silicon,\ndiamond, and some AIIIBV compounds, as GaAs, GaP, InP, InAs, InSb has been\ninvestigated. The nuclear energy loss, and the concentration of primary defects\ninduced in the material bulk by the unit hadron fluence have been calculated.\nThe peculiarities of the proton and pion interactions as well as the specific\nproperties of the semiconductor material have been put in evidence.",
"arxiv_id": "physics/0006054",
"authors": [
"I. Lazanu",
"S. Lazanu",
"M. Bruzzi"
],
"categories": [
"physics.ins-det",
"hep-ex"
],
"title": "Expected behaviour of different semiconductor materials in hadron fields",
"url": "https://arxiv.org/abs/physics/0006054"
},
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