{
  "annotation_id": "a4ba7c59-d07f-4d90-8cd6-adfe7df73b44",
  "date_created": "2026-03-02T18:02:37.249000Z",
  "date_modified": "2026-03-02T18:02:37.249000Z",
  "file_hash": "47e874b528f47f3d719559f0595eebdf192825911be3622bc697bb7478bb4a85",
  "private": false,
  "record": {
    "abstract": "The efficiency and operating range of a photonic crystal laser is improved by\npassivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an\n(NH4)S treatment. The passivated laser shows a four-fold reduction in\nnonradiative surface recombination rate, resulting in a four-fold reduction in\nlasing threshold. A three-level carrier dynamics model explains the results and\nshows that lasing threshold is as much determined by surface recombination\nlosses as by the cavity quality factor (Q). Surface passivation therefore\nappears crucial in operating such lasers under practical conditions.",
    "arxiv_id": "quant-ph/0703198",
    "authors": [
      "Dirk Englund",
      "Hatice Altug",
      "Jelena Vuckovic"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1063/1.2769957",
    "title": "Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser",
    "url": "https://arxiv.org/abs/quant-ph/0703198"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "ba56b65b-4c06-49ff-aae0-283c2f8f4256",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}