dorsal/arxiv
View SchemaSimulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
| Authors | Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto, Lucien Cremaldi, Susanna Cucciarelli, Andrei Dorokhov, Christoph Hoermann, Dongwook Kim, Marcin Konecki, Danek Kotlinski, Kirill Prokofiev, Christian Regenfus, Tilman Rohe, David A. Sanders, Seunghee Son, Thomas Speer |
|---|---|
| Categories | |
| ArXiv ID | physics/0411143 |
| URL | https://arxiv.org/abs/physics/0411143 |
| DOI | 10.1109/TNS.2005.852748 |
| Journal | IEEE Trans.Nucl.Sci. 52 (2005) 1067-1075 |
Abstract
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
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"abstract": "Charge collection measurements performed on heavily irradiated p-spray DOFZ\npixel sensors with a grazing angle hadron beam provide a sensitive\ndetermination of the electric field within the detectors. The data are compared\nwith a complete charge transport simulation of the sensor which includes signal\ntrapping and charge induction effects. A linearly varying electric field based\nupon the standard picture of a constant type-inverted effective doping density\nis inconsistent with the data. A two-trap double junction model implemented in\nthe ISE TCAD software can be tuned to produce a doubly-peaked electric field\nwhich describes the data reasonably well. The modeled field differs somewhat\nfrom previous determinations based upon the transient current technique. The\nmodel can also account for the level of charge trapping observed in the data.",
"arxiv_id": "physics/0411143",
"authors": [
"Vincenzo Chiochia",
"Morris Swartz",
"Daniela Bortoletto",
"Lucien Cremaldi",
"Susanna Cucciarelli",
"Andrei Dorokhov",
"Christoph Hoermann",
"Dongwook Kim",
"Marcin Konecki",
"Danek Kotlinski",
"Kirill Prokofiev",
"Christian Regenfus",
"Tilman Rohe",
"David A. Sanders",
"Seunghee Son",
"Thomas Speer"
],
"categories": [
"physics.ins-det",
"hep-ex"
],
"doi": "10.1109/TNS.2005.852748",
"journal_ref": "IEEE Trans.Nucl.Sci. 52 (2005) 1067-1075",
"title": "Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements",
"url": "https://arxiv.org/abs/physics/0411143"
},
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