{
  "annotation_id": "9bc5242a-377b-4c15-b610-86f23ac8cc06",
  "date_created": "2026-03-02T18:00:32.099000Z",
  "date_modified": "2026-03-02T18:00:32.099000Z",
  "file_hash": "35c280c56350dc6b8dc3b706f9e17d3f35f0d250448383221d23d2481dd03b75",
  "private": false,
  "record": {
    "abstract": "The circular photogalvanic effect (CPGE) has been observed in (100)-oriented\n$p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It\nis shown that monopolar optical spin orientation of free carriers causes an\nelectric current which reverses its direction upon changing from left to right\ncircularly polarized radiation. CPGE at normal incidence and the occurence of\nthe linear photogalvanic effect indicate a reduced point symmetry of studied\nmulti-layered heterostructures. As proposed, CPGE can be utilized to\ninvestigate separately spin polarization of electrons and holes and the\nsymmetry of quantum wells.",
    "arxiv_id": "physics/0008002",
    "authors": [
      "S. D. Ganichev",
      "E. L. Ivchenko",
      "H. Ketterl",
      "L. E. Vorobjev",
      "W. Prettl"
    ],
    "categories": [
      "physics.ins-det",
      "cond-mat.mtrl-sci"
    ],
    "doi": "10.1063/1.1326488",
    "title": "Circular photogalvanic effect induced by monopolar spin orientation in   p-GaAs/AlGaAs MQW",
    "url": "https://arxiv.org/abs/physics/0008002"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "98010a1f-fa83-4e21-841d-ace8ad59df6d",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}