dorsal/arxiv
View SchemaObservation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
| Authors | M. Swartz, V. Chiochia, Y. Allkofer, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer |
|---|---|
| Categories | |
| ArXiv ID | physics/0510040 |
| URL | https://arxiv.org/abs/physics/0510040 |
| DOI | 10.1016/j.nima.2006.05.002 |
| Journal | Nucl.Instrum.Meth. A565 (2006) 212-220 |
Abstract
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
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"abstract": "We show that doubly peaked electric fields are necessary to describe\ngrazing-angle charge collection measurements of irradiated silicon pixel\nsensors. A model of irradiated silicon based upon two defect levels with\nopposite charge states and the trapping of charge carriers can be tuned to\nproduce a good description of the measured charge collection profiles in the\nfluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model\ncorrectly predicts the variation in the profiles as the temperature is changed\nfrom -10C to -25C. The measured charge collection profiles are inconsistent\nwith the linearly-varying electric fields predicted by the usual description\nbased upon a uniform effective doping density. This observation calls into\nquestion the practice of using effective doping densities to characterize\nirradiated silicon.",
"arxiv_id": "physics/0510040",
"authors": [
"M. Swartz",
"V. Chiochia",
"Y. Allkofer",
"D. Bortoletto",
"L. Cremaldi",
"S. Cucciarelli",
"A. Dorokhov",
"C. Hoermann",
"D. Kim",
"M. Konecki",
"D. Kotlinski",
"K. Prokofiev",
"C. Regenfus",
"T. Rohe",
"D. A. Sanders",
"S. Son",
"T. Speer"
],
"categories": [
"physics.ins-det",
"hep-ex"
],
"doi": "10.1016/j.nima.2006.05.002",
"journal_ref": "Nucl.Instrum.Meth. A565 (2006) 212-220",
"title": "Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors",
"url": "https://arxiv.org/abs/physics/0510040"
},
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