{
  "annotation_id": "9a48ed49-c244-46ba-849e-2404e9a8545b",
  "date_created": "2026-03-02T18:01:21.793000Z",
  "date_modified": "2026-03-02T18:01:21.793000Z",
  "file_hash": "cf4fd4febf3cba8c85a5978066cdd1df0a377af5b350a3d4f027dd01246565dc",
  "private": false,
  "record": {
    "abstract": "A new type of field emission display(FED) based on an edge-enhance electron\nemission from metal-insulator-semiconductor (MIS) thin film structure is\nproposed. The electrons produced by an avalanche breakdown in the semiconductor\nnear the edge of a top metal electrode are initially injected to the thin film\nof an insulator with a negative electron affinity (NEA), and then are injected\ninto vacuum in proximity to the top electrode edge. The condition for the\ndeep-depletition breakdown near the edge of the top metal electrode is\nanalytically found in terms of ratio of the insulator thickness to the maximum\n(breakdown) width of the semiconductor depletition region: this ratio should be\nless than 2/(3 \\pi - 2) = 0.27. The influence of a neighboring metal electrode\nand an electrode thickness on this condition are analyzed. Different practical\nschemes of the proposed display with a special reference to M/CaF_2/Si\nstructure are considered.",
    "arxiv_id": "physics/9901018",
    "authors": [
      "V. N. Konopsky"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1088/0022-3727/31/6/007",
    "journal_ref": "J. Phys. D: Appl. Phys., v.31, (1998), p.617-622",
    "title": "A proposal for a new type of thin-film field-emission display by edge   breakdown of MIS structure",
    "url": "https://arxiv.org/abs/physics/9901018"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "302aaa46-383d-4a28-b215-66de0c156567",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}