dorsal/arxiv
View SchemaDC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces
| Authors | O. A. Aktsipetrov, A. A. Fedyanin, A. V. Melnikov, E. D. Mishina, A. N. Rubtsov, M. H. Anderson, P. T. Wilson, M. ter Beek, X. F. Hu, J. I. Dadap, M. C. Downer |
|---|---|
| Categories | |
| ArXiv ID | physics/9806003 |
| URL | https://arxiv.org/abs/physics/9806003 |
| DOI | 10.1103/PhysRevB.60.8924 |
Abstract
The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.
{
"annotation_id": "951e855c-1278-4e9e-acd6-4caf7bc7bc8d",
"date_created": "2026-03-02T18:01:21.832000Z",
"date_modified": "2026-03-02T18:01:21.832000Z",
"file_hash": "5f763f084d06467f71c652bfd9462fb7a14c0ce0771f02316ab986fa8a7962b9",
"private": false,
"record": {
"abstract": "The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation\nat weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally\nin planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic\ngeneration (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The\nspectral dependence of the EFISH contribution near the direct two-photon $E_1$\ntransition of silicon is extracted. A systematic phenomenological model of the\nEFISH phenomenon, including a detailed description of the space charge region\n(SCR) at the semiconductor-dielectric interface in accumulation, depletion, and\ninversion regimes, has been developed. The influence of surface quantization\neffects, interface states, charge traps in the oxide layer, doping\nconcentration and oxide thickness on nonlocal screening of the DC-electric\nfield and on breaking of inversion symmetry in the SCR is considered. The model\ndescribes EFISH generation in the SCR using a Green function formalism which\ntakes into account all retardation and absorption effects of the fundamental\nand second harmonic (SH) waves, optical interference between field-dependent\nand field-independent contributions to the SH field and multiple reflection\ninterference in the SiO$_2$ layer. Good agreement between the phenomenological\nmodel and our recent and new EFISH spectroscopic results is demonstrated.\nFinally, low-frequency electromodulated EFISH is demonstrated as a useful\ndifferential spectroscopic technique for studies of the Si-SiO$_2$ interface in\nsilicon-based MOS structures.",
"arxiv_id": "physics/9806003",
"authors": [
"O. A. Aktsipetrov",
"A. A. Fedyanin",
"A. V. Melnikov",
"E. D. Mishina",
"A. N. Rubtsov",
"M. H. Anderson",
"P. T. Wilson",
"M. ter Beek",
"X. F. Hu",
"J. I. Dadap",
"M. C. Downer"
],
"categories": [
"physics.optics"
],
"doi": "10.1103/PhysRevB.60.8924",
"title": "DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces",
"url": "https://arxiv.org/abs/physics/9806003"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "ad6f276f-1fe6-43e2-bdd3-f365499e1f38",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}