dorsal/arxiv
View SchemaSilicon detectors for the next generation of high energy physics experiments: expected degradation
| Authors | I. Lazanu, S. Lazanu |
|---|---|
| Categories | |
| ArXiv ID | physics/0512275 |
| URL | https://arxiv.org/abs/physics/0512275 |
Abstract
There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their interactions. Until now, semiconductor detectors have widely been used in modern high energy physics experiments. They are elements of the high resolution vertex and tracking system, as well as of calorimeters. The main motivation of this work is to discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion voltage, eventually up to breakdown, and thus affecting the lifetime of detector systems. In this paper, physical phenomena that conduce to the degradation of the detector are discussed and effects are analysed at the device level (leakage current and effective carrier concentration) in the radiation environments expected in the next generation of hadron colliders after LHC, at the next lepton and gamma-gamma colliders, as well as in astroparticle experiments, in conditions of long time continuum irradiations, for different technological options. The predicted results permit a better decision to obtain devices with harder parameters to radiation.
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"abstract": "There exists an enormous interest for the study of very high energy domain in\nparticle physics, both theoretically and experimentally, in the aim to\nconstruct a general theory of the fundamental constituents of matter and of\ntheir interactions. Until now, semiconductor detectors have widely been used in\nmodern high energy physics experiments. They are elements of the high\nresolution vertex and tracking system, as well as of calorimeters. The main\nmotivation of this work is to discuss how to prepare some possible detectors -\nonly silicon option being considered, for the new era of HEP challenges because\nthe bulk displacement damage in the detector, consequence of irradiation,\nproduces effects at the device level that limit their long time utilisation,\nincreasing the leakage current and the depletion voltage, eventually up to\nbreakdown, and thus affecting the lifetime of detector systems. In this paper,\nphysical phenomena that conduce to the degradation of the detector are\ndiscussed and effects are analysed at the device level (leakage current and\neffective carrier concentration) in the radiation environments expected in the\nnext generation of hadron colliders after LHC, at the next lepton and\ngamma-gamma colliders, as well as in astroparticle experiments, in conditions\nof long time continuum irradiations, for different technological options. The\npredicted results permit a better decision to obtain devices with harder\nparameters to radiation.",
"arxiv_id": "physics/0512275",
"authors": [
"I. Lazanu",
"S. Lazanu"
],
"categories": [
"physics.ins-det",
"hep-ph"
],
"title": "Silicon detectors for the next generation of high energy physics experiments: expected degradation",
"url": "https://arxiv.org/abs/physics/0512275"
},
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