{
  "annotation_id": "9415ab4c-d846-437c-8c36-861c9cc659f8",
  "date_created": "2026-03-02T18:00:52.898000Z",
  "date_modified": "2026-03-02T18:00:52.898000Z",
  "file_hash": "26676c94a3f6364a3c8e00a2087f4b86d6f327958ec47c17ee0f8d44c3c6f535",
  "private": false,
  "record": {
    "abstract": "A new method for the extraction of the electric field in the bulk of heavily\nirradiated silicon pixel sensors is presented. It is based on the measurement\nof the Lorentz deflection and mobility of electrons as a function of depth. The\nmeasurements were made at the CERN H2 beam line, with the beam at a shallow\nangle with respect to the pixel sensor surface. The extracted electric field is\nused to simulate the charge collection and the Lorentz deflection in the pixel\nsensor. The simulated charge collection and the Lorentz deflection is in good\nagreement with the measurements both for non-irradiated and irradiated up to\n1E15 neq/cm2 sensors.",
    "arxiv_id": "physics/0412036",
    "authors": [
      "A. Dorokhov",
      "Y. Allkofer",
      "C. Amsler",
      "D. Bortoletto",
      "V. Chiochia",
      "L. Cremaldi",
      "S. Cucciarelli",
      "C. Hoermann",
      "D. Kim",
      "M. Konecki",
      "D. Kotlinski",
      "K. Prokofiev",
      "C. Regenfus",
      "T. Rohe",
      "D. Sanders",
      "S. Son",
      "T. Speer",
      "M. Swartz"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1016/j.nima.2005.11.247",
    "journal_ref": "Nucl.Instrum.Meth.A560:112-117,2006",
    "title": "Extraction of electric field in heavily irradiated silicon pixel sensors",
    "url": "https://arxiv.org/abs/physics/0412036"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "552b7256-e52e-44a4-9244-5e2d42b7adc8",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}