{
  "annotation_id": "9170ef43-3b81-47d7-9ba6-92d05e251236",
  "date_created": "2026-03-02T18:02:24.204000Z",
  "date_modified": "2026-03-02T18:02:24.204000Z",
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  "record": {
    "abstract": "We present a detailed, realistic analysis of the implementation of a proposal\nfor a quantum phase gate based on atomic vibrational states, specializing it to\nneutral rubidium atoms on atom chips. We show how to create a double--well\npotential with static currents on the atom chips, using for all relevant\nparameters values that are achieved with present technology. The potential\nbarrier between the two wells can be modified by varying the currents in order\nto realize a quantum phase gate for qubit states encoded in the atomic external\ndegree of freedom. The gate performance is analyzed through numerical\nsimulations; the operation time is ~10 ms with a performance fidelity above\n99.9%. For storage of the state between the operations the qubit state can be\ntransferred efficiently via Raman transitions to two hyperfine states, where\nits decoherence is strongly inhibited. In addition we discuss the limits\nimposed by the proximity of the surface to the gate fidelity.",
    "arxiv_id": "quant-ph/0603138",
    "authors": [
      "E. Charron",
      "M. A. Cirone",
      "A. Negretti",
      "J. Schmiedmayer",
      "T. Calarco"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1103/PhysRevA.74.012308",
    "journal_ref": "Phys. Rev. A 74, 012308 (2006)",
    "title": "Theoretical analysis of the implementation of a quantum phase gate with   neutral atoms on atom chips",
    "url": "https://arxiv.org/abs/quant-ph/0603138"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "48320be5-aad7-4ebd-a51a-72b5986a8ace",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}