dorsal/arxiv
View SchemaMonte Carlo transient phonons transport in silicon and germanium at nanoscales
| Authors | David Lacroix, Karl Joulain |
|---|---|
| Categories | |
| ArXiv ID | physics/0504072 |
| URL | https://arxiv.org/abs/physics/0504072 |
| DOI | 10.1103/PhysRevB.72.064305 |
Abstract
Heat transport at nanoscales in semiconductors is investigated with a statistical method. The Boltzmann Transport Equation (BTE) which characterize phonons motion and interaction within the crystal lattice has been simulated with a Monte Carlo technique. Our model takes into account media frequency properties through the dispersion curves for longitudinal and transverse acoustic branches. The BTE collisional term involving phonons scattering processes is simulated with the Relaxation Times Approximation theory. A new distribution function accounting for the collisional processes has been developed in order to respect energy conservation during phonons scattering events. This non deterministic approach provides satisfactory results in what concerns phonons transport in both ballistic and diffusion regimes. The simulation code has been tested with silicon and germanium thin films; temperature propagation within samples is presented and compared to analytical solutions (in the diffusion regime). The two materials bulk thermal conductivity is retrieved for temperature ranging between 100 K and 500 K. Heat transfer within a plane wall with a large thermal gradient (250 K-500 K) is proposed in order to expose the model ability to simulate conductivity thermal dependence on heat exchange at nanoscales. Finally, size effects and validity of heat conduction law are investigated for several slab thicknesses.
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"abstract": "Heat transport at nanoscales in semiconductors is investigated with a\nstatistical method. The Boltzmann Transport Equation (BTE) which characterize\nphonons motion and interaction within the crystal lattice has been simulated\nwith a Monte Carlo technique. Our model takes into account media frequency\nproperties through the dispersion curves for longitudinal and transverse\nacoustic branches. The BTE collisional term involving phonons scattering\nprocesses is simulated with the Relaxation Times Approximation theory. A new\ndistribution function accounting for the collisional processes has been\ndeveloped in order to respect energy conservation during phonons scattering\nevents. This non deterministic approach provides satisfactory results in what\nconcerns phonons transport in both ballistic and diffusion regimes. The\nsimulation code has been tested with silicon and germanium thin films;\ntemperature propagation within samples is presented and compared to analytical\nsolutions (in the diffusion regime). The two materials bulk thermal\nconductivity is retrieved for temperature ranging between 100 K and 500 K. Heat\ntransfer within a plane wall with a large thermal gradient (250 K-500 K) is\nproposed in order to expose the model ability to simulate conductivity thermal\ndependence on heat exchange at nanoscales. Finally, size effects and validity\nof heat conduction law are investigated for several slab thicknesses.",
"arxiv_id": "physics/0504072",
"authors": [
"David Lacroix",
"Karl Joulain"
],
"categories": [
"physics.class-ph"
],
"doi": "10.1103/PhysRevB.72.064305",
"title": "Monte Carlo transient phonons transport in silicon and germanium at nanoscales",
"url": "https://arxiv.org/abs/physics/0504072"
},
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