dorsal/arxiv
View SchemaOptical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode
| Authors | J. M. L. Figueiredo, A. R. Boyd, C. R. Stanley, C. N. Ironside, S. G. McMeekin, A. M. P. Leite |
|---|---|
| Categories | |
| ArXiv ID | physics/0503152 |
| URL | https://arxiv.org/abs/physics/0503152 |
| Journal | Appl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999) |
Abstract
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.
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"abstract": "We report electro-absorption modulation of light at around 1550 nm in a\nunipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier\nresonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases\nthe electric field across the waveguide, which shifts the core material\nabsorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus\nchanging the light-guiding characteristics of the waveguide. Low-frequency\ncharacterisation of a device shows modulation up to 28 dB at 1565 nm. When dc\nbiased close to the negative differential conductance (NDC) region, the RTD\noptical waveguide behaves as an electro-absorption modulator integrated with a\nwide bandwidth electrical amplifier, offering a potential advantage over\nconventional pn modulators.",
"arxiv_id": "physics/0503152",
"authors": [
"J. M. L. Figueiredo",
"A. R. Boyd",
"C. R. Stanley",
"C. N. Ironside",
"S. G. McMeekin",
"A. M. P. Leite"
],
"categories": [
"physics.optics"
],
"journal_ref": "Appl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999)",
"title": "Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode",
"url": "https://arxiv.org/abs/physics/0503152"
},
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