{
  "annotation_id": "8fe125a8-a957-4cf9-81b2-5769a830f9ba",
  "date_created": "2026-03-02T18:00:57.240000Z",
  "date_modified": "2026-03-02T18:00:57.240000Z",
  "file_hash": "93d13af64c555fcc834904a1bb2ff4cc2b20cc708a524f8b6aeadcb4a472f213",
  "private": false,
  "record": {
    "abstract": "We report electro-absorption modulation of light at around 1550 nm in a\nunipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier\nresonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases\nthe electric field across the waveguide, which shifts the core material\nabsorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus\nchanging the light-guiding characteristics of the waveguide. Low-frequency\ncharacterisation of a device shows modulation up to 28 dB at 1565 nm. When dc\nbiased close to the negative differential conductance (NDC) region, the RTD\noptical waveguide behaves as an electro-absorption modulator integrated with a\nwide bandwidth electrical amplifier, offering a potential advantage over\nconventional pn modulators.",
    "arxiv_id": "physics/0503152",
    "authors": [
      "J. M. L. Figueiredo",
      "A. R. Boyd",
      "C. R. Stanley",
      "C. N. Ironside",
      "S. G. McMeekin",
      "A. M. P. Leite"
    ],
    "categories": [
      "physics.optics"
    ],
    "journal_ref": "Appl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999)",
    "title": "Optical modulation at around 1550 nm in a InGaAlAs optical waveguide   containing a InGaAs/AlAs resonant tunnelling diode",
    "url": "https://arxiv.org/abs/physics/0503152"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "ce8a5176-4f73-4b9b-bc04-53040230ee4f",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}