{
  "annotation_id": "863c1218-d32a-48b8-a9b3-831b8e4721c6",
  "date_created": "2026-03-02T18:01:07.411000Z",
  "date_modified": "2026-03-02T18:01:07.411000Z",
  "file_hash": "8135a8bb72440da8d211005a963cbfd0b3c2fb393708b7edc70cdb572ea6c2ae",
  "private": false,
  "record": {
    "abstract": "Continuous-wave Raman amplification in silicon waveguides with negative\nelectrical power dissipation is reported. It is shown that a p-n junction can\nsimultaneously achieve carrier sweep-out leading to net continuous-wave gain,\nand electrical power generation. The approach is also applicable to silicon\nRaman lasers and other third-order nonlinear optical devices.",
    "arxiv_id": "physics/0605143",
    "authors": [
      "S. Fathpour",
      "K. K. Tsia",
      "B. Jalali"
    ],
    "categories": [
      "physics.optics"
    ],
    "title": "Energy Scavenging in Silicon Raman Amplifiers",
    "url": "https://arxiv.org/abs/physics/0605143"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "ee944923-b294-4c18-b19c-de6860b3952a",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}