{
  "annotation_id": "7b6340de-cce4-4960-9c6b-1ed5b7e6fcb1",
  "date_created": "2026-03-02T18:00:57.170000Z",
  "date_modified": "2026-03-02T18:00:57.170000Z",
  "file_hash": "edd1f97d2eff9243f6b98bf6e2bef26e110b31d4b8af0a6dcf2e3428bc38fcc6",
  "private": false,
  "record": {
    "abstract": "We measured the thickness of an insensitive surface layer of a PIN\nphotodiode, Hamamatsu S3590-06, used in the Tokyo Axion Helioscope. We made\nalpha-particles impinge on the PIN photodiode in various incidence angles and\nmeasured the pulse height to estimate the thickness of the insensitive surface\nlayer. This measurement showed its thickness was $0.31 \\pm 0.02 \\mu m$ on the\nassumption that the insensitive layer consisted of Si. We calculated the peak\ndetection efficiency for low energy x-rays in consideration of the insensitive\nlayer and escape of x-rays and Auger electrons. This result showed the\nefficiency for 4-10keV x-rays was more than 95%.",
    "arxiv_id": "physics/0504147",
    "authors": [
      "Y. Akimoto",
      "Y. Inoue",
      "M. Minowa"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1016/j.nima.2005.11.158",
    "journal_ref": "Nucl.Instrum.Meth. A557 (2006) 684-687",
    "title": "Measurement of the thickness of an insensitive surface layer of a PIN   photodiode",
    "url": "https://arxiv.org/abs/physics/0504147"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "1215a072-83eb-4c0a-8bba-106e9a345158",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}