dorsal/arxiv
View SchemaSimulation of Heavily Irradiated Silicon Pixel Detectors
| Authors | M. Swartz, V. Chiochia, Y. Allkofer, C. Amsler, D. Bortoletto, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hoermann, D. Kim, M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer |
|---|---|
| Categories | |
| ArXiv ID | physics/0605215 |
| URL | https://arxiv.org/abs/physics/0605215 |
| Journal | ECONF C0604032:0014,2006 |
Abstract
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
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"abstract": "We show that doubly peaked electric fields are necessary to describe\ngrazing-angle charge collection measurements of irradiated silicon pixel\nsensors. A model of irradiated silicon based upon two defect levels with\nopposite charge states and the trapping of charge carriers can be tuned to\nproduce a good description of the measured charge collection profiles in the\nfluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model\ncorrectly predicts the variation in the profiles as the temperature is changed\nfrom -10C to -25C. The measured charge collection profiles are inconsistent\nwith the linearly-varying electric fields predicted by the usual description\nbased upon a uniform effective doping density. This observation calls into\nquestion the practice of using effective doping densities to characterize\nirradiated silicon. The model is now being used to calibrate pixel hit\nreconstruction algorithms for CMS.",
"arxiv_id": "physics/0605215",
"authors": [
"M. Swartz",
"V. Chiochia",
"Y. Allkofer",
"C. Amsler",
"D. Bortoletto",
"L. Cremaldi",
"S. Cucciarelli",
"A. Dorokhov",
"C. Hoermann",
"D. Kim",
"M. Konecki",
"D. Kotlinski",
"K. Prokofiev",
"C. Regenfus",
"T. Rohe",
"D. A. Sanders",
"S. Son",
"T. Speer"
],
"categories": [
"physics.ins-det"
],
"journal_ref": "ECONF C0604032:0014,2006",
"title": "Simulation of Heavily Irradiated Silicon Pixel Detectors",
"url": "https://arxiv.org/abs/physics/0605215"
},
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