{
  "annotation_id": "702e3371-d61e-4313-99e8-861c920c40f0",
  "date_created": "2026-03-02T18:01:21.735000Z",
  "date_modified": "2026-03-02T18:01:21.735000Z",
  "file_hash": "dab2254017fcdf88ce6a6cce0252fd4b8f3ad7d87c1c5fe791e94f287b640cf7",
  "private": false,
  "record": {
    "abstract": "Full size single-sided GaAs microstrip detectors with integrated coupling\ncapacitors and bias resistors have been fabricated on 3\u0027\u0027 substrate wafers.\nPECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling\ncapacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made\nof sputtered CERMET using simple lift of technique. The sheet resistivity of 78\nkOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 /\ndegree C satisfy the demands of small area biasing resistors, working on a wide\ntemperature range.",
    "arxiv_id": "physics/9709041",
    "authors": [
      "R. Irsigler",
      "R. Geppert",
      "R. Goeppert",
      "M. Hornung",
      "J. Ludwig",
      "M. Rogalla",
      "K. Runge",
      "Th. Schmid",
      "A. Soldner-Rembold",
      "M. Webel",
      "C. Weber"
    ],
    "categories": [
      "physics.ins-det"
    ],
    "doi": "10.1016/S0168-9002(98)00007-2",
    "journal_ref": "Nucl.Instrum.Meth. A406 (1998) 427-434",
    "title": "AC-coupled GaAs microstrip detectors with a new type of integrated bias   resistors",
    "url": "https://arxiv.org/abs/physics/9709041"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "d18c1c53-0d17-485a-9af8-54ac020938a9",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}