dorsal/arxiv
View SchemaExtreme Ultraviolet (EUV) Sources for Lithography based on Synchrotron Radiation
| Authors | G. Dattoli, A. Doria, G. P. Gallerano, L. Giannessi, K. Hesch, H. O. Moser, P. L. Ottaviani, E. Pellegrin, R. Rossmanith, R. Steininger, V. Saile, J. Wuest |
|---|---|
| Categories | |
| ArXiv ID | physics/0103055 |
| URL | https://arxiv.org/abs/physics/0103055 |
| DOI | 10.1016/S0168-9002(01)00887-7 |
| Journal | Nucl.Instrum.Meth. A474 (2001) 259-272 |
Abstract
The study presented here was initiated by a discussion to investigate the possibility of using synchrotron radiation as a source for the Next Generation Lithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 13.5 nm or 11.3 nm radiation, respectively). The requirements are: 50 W, 2% bandwidth and minimal power outside this bandwidth. Three options were investigated. The first two deal with radiation from bending magnets and undulators. The results confirm the earlier work by Oxfords Instrument and others that these light-sources lack in-band power while emitting excessive out-of-band radiation. The third approach is a FEL (Free Electron Laser) driven by a 500 MeV linear accelerator with a superconducting mini-undulator as radiation emitting device. Such a device would produce in-band EUV-power in excess of 50 W with negligible out-of-band power.
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"abstract": "The study presented here was initiated by a discussion to investigate the\npossibility of using synchrotron radiation as a source for the Next Generation\nLithography (NGL) based on the EUV-concept (Extreme Ultra-Violet; here 13.5 nm\nor 11.3 nm radiation, respectively). The requirements are: 50 W, 2% bandwidth\nand minimal power outside this bandwidth. Three options were investigated. The\nfirst two deal with radiation from bending magnets and undulators. The results\nconfirm the earlier work by Oxfords Instrument and others that these\nlight-sources lack in-band power while emitting excessive out-of-band\nradiation. The third approach is a FEL (Free Electron Laser) driven by a 500\nMeV linear accelerator with a superconducting mini-undulator as radiation\nemitting device. Such a device would produce in-band EUV-power in excess of 50\nW with negligible out-of-band power.",
"arxiv_id": "physics/0103055",
"authors": [
"G. Dattoli",
"A. Doria",
"G. P. Gallerano",
"L. Giannessi",
"K. Hesch",
"H. O. Moser",
"P. L. Ottaviani",
"E. Pellegrin",
"R. Rossmanith",
"R. Steininger",
"V. Saile",
"J. Wuest"
],
"categories": [
"physics.acc-ph"
],
"doi": "10.1016/S0168-9002(01)00887-7",
"journal_ref": "Nucl.Instrum.Meth. A474 (2001) 259-272",
"title": "Extreme Ultraviolet (EUV) Sources for Lithography based on Synchrotron Radiation",
"url": "https://arxiv.org/abs/physics/0103055"
},
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