{
  "annotation_id": "6368877b-f505-43ec-926b-7cccf6a14a4f",
  "date_created": "2026-03-02T18:01:04.036000Z",
  "date_modified": "2026-03-02T18:01:04.036000Z",
  "file_hash": "8d2e28f396b0fb7bd465b1ad8f38726b47af1af74461c83a9106d3b43b516d32",
  "private": false,
  "record": {
    "abstract": "We investigate for the first time the enhancement of the stimulated Raman\nscattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line\ndefect waveguides. By applying the Bloch-Floquet formalism to the guided modes\nin a planar photonic crystal, we develop a formalism that relates the intensity\nof the down-shifted Stokes signal to the pump intensity and the modal group\nvelocities. The formalism is then applied to two prospective schemes for\nenhanced stimulated Raman generation in slow-light photonic crystal waveguides.\nThe results demonstrate a maximum factor of 10^4 (66,000) enhancement with\nrespect to SOI channel waveguides. Effects of two photon absorption, intrinsic\nscattering, and disorder with respect to slow-light Raman generation towards\noptically-pumped silicon amplifiers and lasers are also discussed.",
    "arxiv_id": "physics/0511040",
    "authors": [
      "J. F. McMillan",
      "X. Yang",
      "N. C. Panoiu",
      "R. M. Osgood",
      "C. W. Wong"
    ],
    "categories": [
      "physics.optics"
    ],
    "doi": "10.1364/OL.31.001235",
    "title": "Enhanced stimulated Raman scattering in slow-light photonic crystal   waveguides",
    "url": "https://arxiv.org/abs/physics/0511040"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "d11b3bf4-df78-4ccc-8463-ac29d98cb2b2",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}