{
  "annotation_id": "5e01eb09-06e7-4a3a-b6aa-2459ab49d37e",
  "date_created": "2026-03-02T18:01:14.143000Z",
  "date_modified": "2026-03-02T18:01:14.143000Z",
  "file_hash": "977cddf6b51a2d968353957d9f9ec5638e510e83fdab075ad34861a6ad48e07c",
  "private": false,
  "record": {
    "abstract": "The Zeeman splitting and the underlying value of the g-factor for conduction\nband electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by\nspin-beat spectroscopy based on a time-resolved Kerr rotation technique. The\nexperimental data are in good agreement with theoretical predictions. The model\naccurately accounts for the large electron energies above the GaAs conduction\nband bottom, resulting from the strong quantum confinement. In the tracked\nrange of optical transition energies E from 1.52 to 2.0eV, the electron\ng-factor along the growth axis follows closely the universal dependence\ng_||(E)= -0.445 + 3.38(E-1.519)-2.21(E-1.519)^2 (with E measured in eV); and\nthis universality also embraces Al_xGa_{1-x}As alloys. The in-plane g-factor\ncomponent deviates notably from the universal curve, with the degree of\ndeviation controlled by the structural anisotropy.",
    "arxiv_id": "physics/0610216",
    "authors": [
      "I. A. Yugova",
      "A. Greilich",
      "D. R. Yakovlev",
      "A. A. Kiselev",
      "M. Bayer",
      "V. V. Petrov",
      "Yu. K. Dolgikh",
      "D. Reuter",
      "A. D. Wieck"
    ],
    "categories": [
      "physics.optics"
    ],
    "doi": "10.1103/PhysRevB.75.245302",
    "title": "Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells",
    "url": "https://arxiv.org/abs/physics/0610216"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "4c5a1470-a7f3-4f8a-a11e-7060b2167ea6",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}