dorsal/arxiv
View SchemaTwo Scale Model for Aggregation and Etching
| Authors | George C. John, Vijay A. Singh |
|---|---|
| Categories | |
| ArXiv ID | patt-sol/9512001 |
| URL | https://arxiv.org/abs/patt-sol/9512001 |
| DOI | 10.1103/PhysRevE.53.3920 |
Abstract
We propose a dual scale drift-diffusion model for interfacial growth and etching processes. The two scales are: (i) a depletion layer width surrounding the aggregate and (ii) a drift length.The interplay between these two antithetical scales yields a variety of distinct morphologies reported in electrochemical deposition of metals, viscous fingering in fluids and in porous silicon formation. Further, our algorithm interpolates between existing growth models (diffusion limited aggregation, ballistic deposition and Eden) for limiting values of these variables.
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"abstract": "We propose a dual scale drift-diffusion model for interfacial growth and\netching processes. The two scales are: (i) a depletion layer width surrounding\nthe aggregate and (ii) a drift length.The interplay between these two\nantithetical scales yields a variety of distinct morphologies reported in\nelectrochemical deposition of metals, viscous fingering in fluids and in porous\nsilicon formation. Further, our algorithm interpolates between existing growth\nmodels (diffusion limited aggregation, ballistic deposition and Eden) for\nlimiting values of these variables.",
"arxiv_id": "patt-sol/9512001",
"authors": [
"George C. John",
"Vijay A. Singh"
],
"categories": [
"patt-sol",
"nlin.PS"
],
"doi": "10.1103/PhysRevE.53.3920",
"title": "Two Scale Model for Aggregation and Etching",
"url": "https://arxiv.org/abs/patt-sol/9512001"
},
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"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
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