dorsal/arxiv
View SchemaType inversion in irradiated silicon: a half truth
| Authors | M. Swartz, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, A. Dorokhov, M. Konecki, K. Prokofiev, C. Regenfus, T. Rohe, D. A. Sanders, S. Son, T. Speer |
|---|---|
| Categories | |
| ArXiv ID | physics/0409049 |
| URL | https://arxiv.org/abs/physics/0409049 |
Abstract
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.
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"date_created": "2026-03-02T18:00:53.575000Z",
"date_modified": "2026-03-02T18:00:53.575000Z",
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"abstract": "Charge collection measurements performed on heavily irradiated p-spray dofz\npixel sensors with a grazing angle hadron beam provide a sensitive\ndetermination of the electric field within the detectors. The data are compared\nwith a complete charge transport simulation of the sensor which includes signal\ntrapping and charge induction effects. A linearly varying electric field based\nupon the standard picture of a constant type-inverted effective doping density\nis inconsistent with the data. A two-trap double junction model implemented in\nISE TCAD software can be tuned to produce a doubly-peaked electric field which\ndescribes the data reasonably well at two different fluences. The modeled field\ndiffers somewhat from previous determinations based upon the transient current\ntechnique. The model can also account for the level of signal trapping observed\nin the data.",
"arxiv_id": "physics/0409049",
"authors": [
"M. Swartz",
"D. Bortoletto",
"V. Chiochia",
"L. Cremaldi",
"S. Cucciarelli",
"A. Dorokhov",
"M. Konecki",
"K. Prokofiev",
"C. Regenfus",
"T. Rohe",
"D. A. Sanders",
"S. Son",
"T. Speer"
],
"categories": [
"physics.ins-det",
"hep-ex"
],
"title": "Type inversion in irradiated silicon: a half truth",
"url": "https://arxiv.org/abs/physics/0409049"
},
"schema_id": "dorsal/arxiv",
"source": {
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"id": "arXiv Dataset IDs",
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"variant": "snapshot-2026-03-01",
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