dorsal/arxiv
View SchemaAn Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation
| Authors | Keith M. Beardmore, Niels Gronbech-Jensen |
|---|---|
| Categories | |
| ArXiv ID | physics/9901054 |
| URL | https://arxiv.org/abs/physics/9901054 |
| DOI | 10.1103/PhysRevE.57.7278 |
| Journal | Physical Review E, 57 (1998) pp. 7278-7287 |
Abstract
We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing the computational overhead, plus a rare event algorithm that allows statistically reliable results to be obtained over a range of several orders of magnitude in the dopant concentration. We give examples of using this scheme for calculating concentration profiles of dopants in crystalline silicon. Here we can predict the experimental profile over five orders of magnitude for both channeling and non-channeling implants at energies up to 100s of keV. The scheme has advantages over binary collision approximation (BCA) simulations, in that it does not rely on a large set of empirically fitted parameters. Although our scheme has a greater computational overhead than the BCA, it is far superior in the low ion energy regime, where the BCA scheme becomes invalid.
{
"annotation_id": "500ba28d-2c9b-456a-a312-eee3118511ad",
"date_created": "2026-03-02T18:01:21.414000Z",
"date_modified": "2026-03-02T18:01:21.414000Z",
"file_hash": "8e29e1ea977757ec08f287ba8fd79164de87d70eebc69b99d8379b311023cd3e",
"private": false,
"record": {
"abstract": "We present a highly efficient molecular dynamics scheme for calculating the\nconcentration depth profile of dopants in ion irradiated materials. The scheme\nincorporates several methods for reducing the computational overhead, plus a\nrare event algorithm that allows statistically reliable results to be obtained\nover a range of several orders of magnitude in the dopant concentration.\n We give examples of using this scheme for calculating concentration profiles\nof dopants in crystalline silicon. Here we can predict the experimental profile\nover five orders of magnitude for both channeling and non-channeling implants\nat energies up to 100s of keV.\n The scheme has advantages over binary collision approximation (BCA)\nsimulations, in that it does not rely on a large set of empirically fitted\nparameters. Although our scheme has a greater computational overhead than the\nBCA, it is far superior in the low ion energy regime, where the BCA scheme\nbecomes invalid.",
"arxiv_id": "physics/9901054",
"authors": [
"Keith M. Beardmore",
"Niels Gronbech-Jensen"
],
"categories": [
"physics.comp-ph",
"cond-mat.mtrl-sci",
"physics.chem-ph"
],
"doi": "10.1103/PhysRevE.57.7278",
"journal_ref": "Physical Review E, 57 (1998) pp. 7278-7287",
"title": "An Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation",
"url": "https://arxiv.org/abs/physics/9901054"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "9c184ced-41ac-4fd5-b2f7-6c2d4a1502dc",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}