dorsal/arxiv
View SchemaElectron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
| Authors | Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo |
|---|---|
| Categories | |
| ArXiv ID | quant-ph/9905096 |
| URL | https://arxiv.org/abs/quant-ph/9905096 |
| DOI | 10.1103/PhysRevA.62.012306 |
Abstract
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological basis for quantum information processing. One and two qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g-factor (Si:g=1.995, Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain Silicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.
{
"annotation_id": "4e6a65b7-f90b-48b4-8a39-bdebbf1da1fa",
"date_created": "2026-03-02T18:02:48.353000Z",
"date_modified": "2026-03-02T18:02:48.353000Z",
"file_hash": "8ea9c282daf042877e0ee23339ef81d4aae103cfa97c73ad0022f50d56ab12de",
"private": false,
"record": {
"abstract": "We apply the full power of modern electronic band structure engineering and\nepitaxial heterostructures to design a transistor that can sense and control a\nsingle donor electron spin. Spin resonance transistors may form the\ntechnological basis for quantum information processing. One and two qubit\noperations are performed by applying a gate bias. The bias electric field pulls\nthe electron wave function away from the dopant ion into layers of different\nalloy composition. Owing to the variation of the g-factor (Si:g=1.995,\nGe:g=1.563), this displacement changes the spin Zeeman energy, allowing\nsingle-qubit operations. By displacing the electron even further, the overlap\nwith neighboring qubits is affected, which allows two-qubit operations. Certain\nSilicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is\nwell within the capabilities of current lithographic techniques. We discuss\nmanufacturing limitations and issues regarding scaling up to a large size\ncomputer.",
"arxiv_id": "quant-ph/9905096",
"authors": [
"Rutger Vrijen",
"Eli Yablonovitch",
"Kang Wang",
"Hong Wen Jiang",
"Alex Balandin",
"Vwani Roychowdhury",
"Tal Mor",
"David DiVincenzo"
],
"categories": [
"quant-ph"
],
"doi": "10.1103/PhysRevA.62.012306",
"title": "Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures",
"url": "https://arxiv.org/abs/quant-ph/9905096"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "07c26460-c2f1-46ad-ad4d-860b61c75ce9",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}