{
  "annotation_id": "3f4c6be5-e1d9-47b1-b35b-311a6e437b53",
  "date_created": "2026-03-02T18:02:33.511000Z",
  "date_modified": "2026-03-02T18:02:33.511000Z",
  "file_hash": "17a2f66fea6cc13799c23b74d5976c1e333c66add108749e58193d1b6e3c72b2",
  "private": false,
  "record": {
    "abstract": "We propose a compact high-intensity room-temperature source of entangled\nphotons based on the efficient second-order process of two-photon spontaneous\nemission from electrically-pumped semiconductor quantum wells in a photonic\nmicrocavity. Two-photon emission rate in room-temperature semiconductor devices\nis determined solely by the carrier density, regardless of the residual\none-photon emission. The microcavity selects two-photon emission for a specific\nsignal and idler wavelengths and at a preferred direction without modifying the\noverall rate. Pair-generation rate in GaAs/AlGaAs quantum well structure is\nestimated using a 14-band model to be 3 orders of magnitude higher than for\ntraditional broadband parametric down-conversion sources.",
    "arxiv_id": "quant-ph/0612124",
    "authors": [
      "Alex Hayat",
      "Pavel Ginzburg",
      "Meir Orenstein"
    ],
    "categories": [
      "quant-ph"
    ],
    "doi": "10.1103/PhysRevB.76.035339",
    "title": "High-Rate Entanglement Source via Two-Photon Emission from Semiconductor   Quantum Wells",
    "url": "https://arxiv.org/abs/quant-ph/0612124"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "8b745244-872d-4436-a34a-a8e9d526f9e8",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}