dorsal/arxiv
View SchemaAnnealing of radiation induced defects in silicon in a simplified phenomenological model
| Authors | Sorina Lazanu, Ionel Lazanu |
|---|---|
| Categories | |
| ArXiv ID | physics/0008077 |
| URL | https://arxiv.org/abs/physics/0008077 |
| DOI | 10.1016/S0168-583X(01)00767-4 |
| Journal | Nucl.Instrum.Meth. B183 (2001) 383-390 |
Abstract
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials, that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of the incident particles, for different temperatures; the corresponding stationary solutions are also presented.
{
"annotation_id": "3a5bd74e-5b45-45cc-9224-b08644d8e3d8",
"date_created": "2026-03-02T18:00:32.530000Z",
"date_modified": "2026-03-02T18:00:32.530000Z",
"file_hash": "a908f083c51b623f5bc578633d2b899eef65f0f041d8c2db732b031f88c1b191",
"private": false,
"record": {
"abstract": "The concentration of primary radiation induced defects has been previously\nestimated considering both the explicit mechanisms of the primary interaction\nbetween the incoming particle and the nuclei of the semiconductor lattice, and\nthe recoil energy partition between ionisation and displacements, in the frame\nof the Lindhard theory. The primary displacement defects are vacancies and\ninterstitials, that are essentially unstable in silicon. They interact via\nmigration, recombination, annihilation or produce other defects. In the present\nwork, the time evolution of the concentration of defects induced by pions in\nmedium and high resistivity silicon for detectors is modelled, after\nirradiation. In some approximations, the differential equations representing\nthe time evolution processes could be decoupled. The theoretical equations so\nobtained are solved analytically in some particular cases, with one free\nparameter, for a wide range of particle fluences and/or for a wide energy range\nof the incident particles, for different temperatures; the corresponding\nstationary solutions are also presented.",
"arxiv_id": "physics/0008077",
"authors": [
"Sorina Lazanu",
"Ionel Lazanu"
],
"categories": [
"physics.ins-det"
],
"doi": "10.1016/S0168-583X(01)00767-4",
"journal_ref": "Nucl.Instrum.Meth. B183 (2001) 383-390",
"title": "Annealing of radiation induced defects in silicon in a simplified phenomenological model",
"url": "https://arxiv.org/abs/physics/0008077"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "ae4e9ec1-e8a2-4d5b-ada9-79734339e3a4",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}