dorsal/arxiv
View SchemaCharacterization of a high-power tapered semiconductor amplifier system
| Authors | D. Voigt, E. C. Schilder, R. J. C. Spreeuw, H. B. van Linden van den Heuvell |
|---|---|
| Categories | |
| ArXiv ID | physics/0004043 |
| URL | https://arxiv.org/abs/physics/0004043 |
| Journal | Appl. Phys. B 72, 279284 (2001) |
Abstract
We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral background with a width of 4nm FWHM. The ASE background was suppressed to below our detection limit by a proper choice of operating current and temperature, and by sending the light through a single-mode optical fiber. The final ASE spectral density was less than 0.1nW/MHz, i.e. less than 0.2 % of the optical power. Related to an optical transition linewidth of $\Gamma/2\pi=6$ MHz for rubidium, this gives a background suppression of better than -82dB. An indication of the beam quality is provided by the fiber coupling efficiency up to 59 %. The application of the amplifier system as a laser source for atom optical experiments is discussed.
{
"annotation_id": "36876284-6b6f-4115-9842-b54d89cc015e",
"date_created": "2026-03-02T18:00:32.485000Z",
"date_modified": "2026-03-02T18:00:32.485000Z",
"file_hash": "699bd1a473ec3955bf204abb48a770cf0f2e9c9d4698cd0da63e3dea59138a3a",
"private": false,
"record": {
"abstract": "We have characterized a semiconductor amplifier laser system which provides\nup to 200mW output after a single-mode optical fiber at 780nm wavelength. The\nsystem is based on a tapered semiconductor gain element, which amplifies the\noutput of a narrow-linewidth diode laser. Gain and saturation are discussed as\na function of operating temperature and injection current. The spectral\nproperties of the amplifier are investigated with a grating spectrometer.\nAmplified spontaneous emission (ASE) causes a spectral background with a width\nof 4nm FWHM. The ASE background was suppressed to below our detection limit by\na proper choice of operating current and temperature, and by sending the light\nthrough a single-mode optical fiber. The final ASE spectral density was less\nthan 0.1nW/MHz, i.e. less than 0.2 % of the optical power. Related to an\noptical transition linewidth of $\\Gamma/2\\pi=6$ MHz for rubidium, this gives a\nbackground suppression of better than -82dB. An indication of the beam quality\nis provided by the fiber coupling efficiency up to 59 %. The application of the\namplifier system as a laser source for atom optical experiments is discussed.",
"arxiv_id": "physics/0004043",
"authors": [
"D. Voigt",
"E. C. Schilder",
"R. J. C. Spreeuw",
"H. B. van Linden van den Heuvell"
],
"categories": [
"physics.atom-ph",
"physics.optics"
],
"journal_ref": "Appl. Phys. B 72, 279284 (2001)",
"title": "Characterization of a high-power tapered semiconductor amplifier system",
"url": "https://arxiv.org/abs/physics/0004043"
},
"schema_id": "dorsal/arxiv",
"source": {
"execution_id": "a9fe0145-c638-44a9-92b5-48fc63c3e408",
"id": "arXiv Dataset IDs",
"type": "Model",
"variant": "snapshot-2026-03-01",
"version": "0.1.0"
},
"user_id": 1000002
}