{
  "annotation_id": "2c8d138d-8ca1-45d3-9de1-5f25b6a804b4",
  "date_created": "2026-03-02T18:00:46.021000Z",
  "date_modified": "2026-03-02T18:00:46.021000Z",
  "file_hash": "91bba439f95b9e309531fa7dfbebba40bff28dd1ba340b071a4d0410a1737fdf",
  "private": false,
  "record": {
    "abstract": "A simple upwind discretization of the highly coupled non-linear differential\nequations which define the hydrodynamic model for semiconductors is given in\nfull detail. The hydrodynamic model is able to describe inertia effects which\nplay an increasing role in different fields of opto- and microelectronics. A\nsilicon $n^+ - n - n^+$ - structure is simulated, using the energy-balance\nmodel and the full hydrodynamic model. Results for stationary cases are then\ncompared, and it is pointed out where the energy-balance model, which is\nimplemented in most of today\u0027s commercial semiconductor device simulators,\nfails to describe accurately the electron dynamics. Additionally, a GaAs $n^+ -\nn - n^+$-structure is simulated in time-domain in order to illustrate the\nimportance of inertia effects at high frequencies in modern submicron devices.",
    "arxiv_id": "physics/0312021",
    "authors": [
      "A. Aste",
      "R. Vahldieck"
    ],
    "categories": [
      "physics.comp-ph",
      "physics.flu-dyn"
    ],
    "doi": "10.1002/jnm.491",
    "journal_ref": "Int. J. Numer. Model. 16 (2003) 161-174",
    "title": "Time-domain simulation of the full hydrodynamic model",
    "url": "https://arxiv.org/abs/physics/0312021"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "045806a8-e6ed-4f1d-a780-ef6ba28a9169",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}