dorsal/arxiv
View SchemaEnhancing the photomixing efficiency of optoelectronic devices in the terahertz regime
| Authors | Subrahmanyam Pilla |
|---|---|
| Categories | |
| ArXiv ID | physics/0604218 |
| URL | https://arxiv.org/abs/physics/0604218 |
| DOI | 10.1063/1.2724924 |
Abstract
A method to reduce the transit time of majority of carriers in photomixers and photo detectors to $< 1$ ps is proposed. Enhanced optical fields associated with surface plasmon polaritons, coupled with velocity overshoot phenomenon results in net decrease of transit time of carriers. As an example, model calculations demonstrating $> 280\times$ (or $\sim$2800 and 31.8 $\mu$W at 1 and 5 THz respectively) improvement in THz power generation efficiency of a photomixer based on Low Temperature grown GaAs are presented. Due to minimal dependence on the carrier recombination time, it is anticipated that the proposed method paves the way for enhancing the speed and efficiency of photomixers and detectors covering UV to far infrared communications wavelengths (300 to 1600 nm).
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"abstract": "A method to reduce the transit time of majority of carriers in photomixers\nand photo detectors to $\u003c 1$ ps is proposed. Enhanced optical fields associated\nwith surface plasmon polaritons, coupled with velocity overshoot phenomenon\nresults in net decrease of transit time of carriers. As an example, model\ncalculations demonstrating $\u003e 280\\times$ (or $\\sim$2800 and 31.8 $\\mu$W at 1\nand 5 THz respectively) improvement in THz power generation efficiency of a\nphotomixer based on Low Temperature grown GaAs are presented. Due to minimal\ndependence on the carrier recombination time, it is anticipated that the\nproposed method paves the way for enhancing the speed and efficiency of\nphotomixers and detectors covering UV to far infrared communications\nwavelengths (300 to 1600 nm).",
"arxiv_id": "physics/0604218",
"authors": [
"Subrahmanyam Pilla"
],
"categories": [
"physics.optics"
],
"doi": "10.1063/1.2724924",
"title": "Enhancing the photomixing efficiency of optoelectronic devices in the terahertz regime",
"url": "https://arxiv.org/abs/physics/0604218"
},
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