dorsal/arxiv
View SchemaRigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters
| Authors | J. Pomplun, S. Burger, F. Schmidt, L. Zschiedrich, F. Scholze, C. Laubis, U. Dersch |
|---|---|
| Categories | |
| ArXiv ID | physics/0610236 |
| URL | https://arxiv.org/abs/physics/0610236 |
| DOI | 10.1117/12.686828 |
| Journal | Proc. SPIE Vol. 6349 (2006) 63493D. (26th Annual BACUS Symposium on Photomask Technology, P. M. Martin, R. J. Naber, Eds.) |
Abstract
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between Advanced Mask Technology Center (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB, scatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical simulation).
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"abstract": "We present rigorous simulations of EUV masks with technological imperfections\nlike side-wall angles and corner roundings. We perform an optimization of two\ndifferent geometrical parameters in order to fit the numerical results to\nresults obtained from experimental scatterometry measurements. For the\nnumerical simulations we use an adaptive finite element approach on irregular\nmeshes. This gives us the opportunity to model geometrical structures\naccurately. Moreover we comment on the use of domain decomposition techniques\nfor EUV mask simulations. Geometric mask parameters have a great influence on\nthe diffraction pattern. We show that using accurate simulation tools it is\npossible to deduce the relevant geometrical parameters of EUV masks from\nscatterometry measurements.\n This work results from a collaboration between Advanced Mask Technology\nCenter (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB,\nscatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical\nsimulation).",
"arxiv_id": "physics/0610236",
"authors": [
"J. Pomplun",
"S. Burger",
"F. Schmidt",
"L. Zschiedrich",
"F. Scholze",
"C. Laubis",
"U. Dersch"
],
"categories": [
"physics.optics",
"physics.comp-ph"
],
"doi": "10.1117/12.686828",
"journal_ref": "Proc. SPIE Vol. 6349 (2006) 63493D. (26th Annual BACUS Symposium\n on Photomask Technology, P. M. Martin, R. J. Naber, Eds.)",
"title": "Rigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters",
"url": "https://arxiv.org/abs/physics/0610236"
},
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