{
  "annotation_id": "227213bc-5d6d-41dd-a4c6-525c82227310",
  "date_created": "2026-03-02T18:00:56.756000Z",
  "date_modified": "2026-03-02T18:00:56.756000Z",
  "file_hash": "0141541bf2457ae60fd3e212aa0f7700ec9313921dbc1b5e8c2529e6ab08776f",
  "private": false,
  "record": {
    "abstract": "We have investigated the electronic structure and magnetic properties of GdN\nas a function of unit cell volume. Based on the first-principles calculations\nof GdN, we observe that there is a transformation in conduction properties\nassociated with the volume increase: first from halfmetallic to semi-metallic,\nthen ultimately to semiconducting. We show that applying stress can alter the\ncarrier concentration as well as mobility of the holes and electrons in the\nmajority spin channel. In addition, we found that the exchange parameters\ndepend strongly on lattice constant, thus the Curie temperature of this system\ncan be enhanced by applying stress or doping impurities.",
    "arxiv_id": "physics/0503224",
    "authors": [
      "C. -G. Duan",
      "R. F. Sabiryanov",
      "J. Liu",
      "W. N. Mei",
      "P. A. Dowben",
      "J. R. Hardy"
    ],
    "categories": [
      "physics.comp-ph"
    ],
    "doi": "10.1103/PhysRevLett.94.237201",
    "title": "Strain induced half-metal to semiconductor transition in GdN",
    "url": "https://arxiv.org/abs/physics/0503224"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "f270294e-b226-4614-b71d-fe5ed6f73e4a",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}