dorsal/arxiv
View SchemaThe role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation
| Authors | I. Lazanu, S. Lazanu |
|---|---|
| Categories | |
| ArXiv ID | physics/0507058 |
| URL | https://arxiv.org/abs/physics/0507058 |
| DOI | 10.1088/0031-8949/74/2/009 |
| Journal | Phys.Scripta 74 (2006) 201-207 |
Abstract
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis of the behaviour of silicon detectors after irradiation conduces to a good or reasonable agreement between theoretical calculations and experimental data for the time evolution of the leakage current and effective carrier concentration after lepton and gamma irradiation and large discrepancies after hadron irradiation and this in conditions where a reasonable agreement is obtained between experimental and calculated concentrations of complex defects. In this contribution, we argue that the main discrepancies could be solved naturally considering as primary defects the self-interstitials, classical vacancies and the new predicted fourfold coordinated silicon pseudo-vacancy defects. This new defect is supposed to be introduced uniformly in the bulk during irradiation, has deep energy level(s) in the gap and it is stable in time. Considering the mechanisms of production of defects and their kinetics, it was possible to determine indirectly the characteristics of the SiFFCD defect: energy level in the band gap and cross section for minority carrier capture. In the frame of the model, the effects of primary defects on the degradation of silicon detectors are important in conditions of continuous long time irradiation and /or high fluences.
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"abstract": "The principal obstacle to long-time operation of silicon detectors at the\nhighest energies in the next generation of experiments arises from bulk\ndisplacement damage which causes significant degradation of their macroscopic\nproperties. The analysis of the behaviour of silicon detectors after\nirradiation conduces to a good or reasonable agreement between theoretical\ncalculations and experimental data for the time evolution of the leakage\ncurrent and effective carrier concentration after lepton and gamma irradiation\nand large discrepancies after hadron irradiation and this in conditions where a\nreasonable agreement is obtained between experimental and calculated\nconcentrations of complex defects. In this contribution, we argue that the main\ndiscrepancies could be solved naturally considering as primary defects the\nself-interstitials, classical vacancies and the new predicted fourfold\ncoordinated silicon pseudo-vacancy defects. This new defect is supposed to be\nintroduced uniformly in the bulk during irradiation, has deep energy level(s)\nin the gap and it is stable in time. Considering the mechanisms of production\nof defects and their kinetics, it was possible to determine indirectly the\ncharacteristics of the SiFFCD defect: energy level in the band gap and cross\nsection for minority carrier capture. In the frame of the model, the effects of\nprimary defects on the degradation of silicon detectors are important in\nconditions of continuous long time irradiation and /or high fluences.",
"arxiv_id": "physics/0507058",
"authors": [
"I. Lazanu",
"S. Lazanu"
],
"categories": [
"physics.ins-det",
"cond-mat.mtrl-sci",
"hep-ph"
],
"doi": "10.1088/0031-8949/74/2/009",
"journal_ref": "Phys.Scripta 74 (2006) 201-207",
"title": "The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation",
"url": "https://arxiv.org/abs/physics/0507058"
},
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