dorsal/arxiv
View SchemaInteracting electrons in silicon quantum interconnects
| Authors | Anantha S. Rao, Christopher David White, Sean R. Muleady, Anthony Sigillito, Michael J. Gullans |
|---|---|
| Categories | |
| ArXiv ID | 2601.05306vv1 |
| URL | https://arxiv.org/abs/2601.05306 |
| License | http://creativecommons.org/licenses/by/4.0/ |
Abstract
Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We support these results through large-scale density matrix renormalization group (DMRG) simulations of the interacting ground state under both screened and unscreened Coulomb potentials. We propose experimental signatures of the Wigner-Friedel crossover via charge transport and charge sensing in both zero- and high-magnetic field limits. We also analyze the impact of short-range correlated disorder - including random alloy fluctuations and valley splitting variations - and identify that the Wigner-Friedel crossover remains robust until disorder levels of about 400 micro eV. Finally, we show that the Wigner regime enables long-range capacitive coupling between quantum dots across the interconnect, suggesting a route to create long-range entanglement between solid-state qubits. Our results position silicon interconnects as a platform for studying Luttinger liquid physics and for enabling architectures supporting nonlocal quantum error correction and quantum simulation.
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"abstract": "Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We support these results through large-scale density matrix renormalization group (DMRG) simulations of the interacting ground state under both screened and unscreened Coulomb potentials. We propose experimental signatures of the Wigner-Friedel crossover via charge transport and charge sensing in both zero- and high-magnetic field limits. We also analyze the impact of short-range correlated disorder - including random alloy fluctuations and valley splitting variations - and identify that the Wigner-Friedel crossover remains robust until disorder levels of about 400 micro eV. Finally, we show that the Wigner regime enables long-range capacitive coupling between quantum dots across the interconnect, suggesting a route to create long-range entanglement between solid-state qubits. Our results position silicon interconnects as a platform for studying Luttinger liquid physics and for enabling architectures supporting nonlocal quantum error correction and quantum simulation.",
"arxiv_id": "2601.05306",
"authors": [
"Anantha S. Rao",
"Christopher David White",
"Sean R. Muleady",
"Anthony Sigillito",
"Michael J. Gullans"
],
"categories": [
"cond-mat.mes-hall",
"cond-mat.dis-nn",
"cond-mat.str-el",
"quant-ph"
],
"license": "http://creativecommons.org/licenses/by/4.0/",
"title": "Interacting electrons in silicon quantum interconnects",
"url": "https://arxiv.org/abs/2601.05306",
"version": "v1"
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