dorsal/arxiv
View SchemaGiant and Oscillatory Junction Magnetoresistance via RKKY-like Spin Coupling in Spin-Gapless Mn$_2$CoAl/SiO$_2$/p-Si Heterostructures
| Authors | Nilay Maji, Subham Mohanty, Pujarani Dehuri |
|---|---|
| Categories | |
| ArXiv ID | 2601.05303vv1 |
| URL | https://arxiv.org/abs/2601.05303 |
| License | http://creativecommons.org/licenses/by/4.0/ |
Abstract
Here, we report spin-selective transport and exceptionally large positive junction magnetoresistance (JMR) in sputter-deposited Mn$_2$CoAl/native-SiO$_2$/p-Si heterostructures. Highly ordered inverse-Heusler Mn$_2$CoAl thin films with near-ideal XA chemical ordering ($S \approx 0.97$) and a Curie temperature of $\sim \SI{590}{\kelvin}$ are realized using a magnetron sputtering process. The spin-gapless semiconducting nature of Mn$_2$CoAl is experimentally supported by a weakly temperature-dependent resistivity with a very small negative temperature coefficient of resistance (TCR $\approx -4.2 \times 10^{-9}$~$\si{\ohm\meter\per\kelvin}$) and a nonsaturating linear magnetoresistance over a wide range of magnetic fields and temperatures. A giant positive JMR of $\sim \SI{825}{\percent}$ at \SI{10}{\kelvin} and $\sim \SI{134}{\percent}$ at room temperature is observed despite the presence of only a single ferromagnetic electrode. Systematic variation of the SiO$_2$ tunnel barrier thickness reveals a reproducible oscillatory sign reversal of the JMR accompanied by a monotonic decay in magnitude. This behavior reflects thickness-dependent modulation of spin-selective tunneling mediated by phase-coherent interfacial carriers and can be described phenomenologically by an RKKY-like functional form without invoking conventional metallic exchange interactions. These results identify Mn$_2$CoAl/native-SiO$_2$/p-Si heterostructures as robust and scalable platforms for room-temperature spin-selective transport, with potential applications in semiconductor-compatible spin filters, magnetic field sensors, and reconfigurable spintronic logic elements.
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"abstract": "Here, we report spin-selective transport and exceptionally large positive junction magnetoresistance (JMR) in sputter-deposited Mn$_2$CoAl/native-SiO$_2$/p-Si heterostructures. Highly ordered inverse-Heusler Mn$_2$CoAl thin films with near-ideal XA chemical ordering ($S \\approx 0.97$) and a Curie temperature of $\\sim \\SI{590}{\\kelvin}$ are realized using a magnetron sputtering process. The spin-gapless semiconducting nature of Mn$_2$CoAl is experimentally supported by a weakly temperature-dependent resistivity with a very small negative temperature coefficient of resistance (TCR $\\approx -4.2 \\times 10^{-9}$~$\\si{\\ohm\\meter\\per\\kelvin}$) and a nonsaturating linear magnetoresistance over a wide range of magnetic fields and temperatures.\n A giant positive JMR of $\\sim \\SI{825}{\\percent}$ at \\SI{10}{\\kelvin} and $\\sim \\SI{134}{\\percent}$ at room temperature is observed despite the presence of only a single ferromagnetic electrode. Systematic variation of the SiO$_2$ tunnel barrier thickness reveals a reproducible oscillatory sign reversal of the JMR accompanied by a monotonic decay in magnitude. This behavior reflects thickness-dependent modulation of spin-selective tunneling mediated by phase-coherent interfacial carriers and can be described phenomenologically by an RKKY-like functional form without invoking conventional metallic exchange interactions. These results identify Mn$_2$CoAl/native-SiO$_2$/p-Si heterostructures as robust and scalable platforms for room-temperature spin-selective transport, with potential applications in semiconductor-compatible spin filters, magnetic field sensors, and reconfigurable spintronic logic elements.",
"arxiv_id": "2601.05303",
"authors": [
"Nilay Maji",
"Subham Mohanty",
"Pujarani Dehuri"
],
"categories": [
"cond-mat.mes-hall"
],
"license": "http://creativecommons.org/licenses/by/4.0/",
"title": "Giant and Oscillatory Junction Magnetoresistance via RKKY-like Spin Coupling in Spin-Gapless Mn$_2$CoAl/SiO$_2$/p-Si Heterostructures",
"url": "https://arxiv.org/abs/2601.05303",
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