dorsal/arxiv
View SchemaAs-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
| Authors | Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr, Akihiro Ohtake, Gavin R. Bell, Nobuyuki Koguchi |
|---|---|
| Categories | |
| ArXiv ID | physics/0202013 |
| URL | https://arxiv.org/abs/physics/0202013 |
Abstract
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.
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"abstract": "As-rich GaAs (001) surfaces are successfully observed during As4-irradition\nby a system in which scanning tunneling microscopy (STM) and molecular beam\nepitaxy can be performed simultaneously. With a substrate temperature of 440 C\nand an As4 partial pressure of 2x10-6 torr, reflection high energy electron\ndiffraction patterns and reflectance anisotropy spectra confirm a c(4x4)\nAs-stabilized surface. STM images clearly show alteration of the surface\nreconstructions while scanning. It is postulated that continual attachment /\ndetachment of As molecules to and from the surface produces the observed\ndynamic behavior.",
"arxiv_id": "physics/0202013",
"authors": [
"Shiro Tsukamoto",
"Markus Pristovsek",
"Bradford G. Orr",
"Akihiro Ohtake",
"Gavin R. Bell",
"Nobuyuki Koguchi"
],
"categories": [
"physics.chem-ph",
"physics.atm-clus"
],
"title": "As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy",
"url": "https://arxiv.org/abs/physics/0202013"
},
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