{
  "annotation_id": "1bd65f91-1de6-4bc7-88f2-75e021d4bb7a",
  "date_created": "2026-03-02T18:00:39.778000Z",
  "date_modified": "2026-03-02T18:00:39.778000Z",
  "file_hash": "98d243bb53118e3fed88437fd0d807a58d57d9e8750dc8930d0578070fd39f07",
  "private": false,
  "record": {
    "abstract": "As-rich GaAs (001) surfaces are successfully observed during As4-irradition\nby a system in which scanning tunneling microscopy (STM) and molecular beam\nepitaxy can be performed simultaneously. With a substrate temperature of 440 C\nand an As4 partial pressure of 2x10-6 torr, reflection high energy electron\ndiffraction patterns and reflectance anisotropy spectra confirm a c(4x4)\nAs-stabilized surface. STM images clearly show alteration of the surface\nreconstructions while scanning. It is postulated that continual attachment /\ndetachment of As molecules to and from the surface produces the observed\ndynamic behavior.",
    "arxiv_id": "physics/0202013",
    "authors": [
      "Shiro Tsukamoto",
      "Markus Pristovsek",
      "Bradford G. Orr",
      "Akihiro Ohtake",
      "Gavin R. Bell",
      "Nobuyuki Koguchi"
    ],
    "categories": [
      "physics.chem-ph",
      "physics.atm-clus"
    ],
    "title": "As-rich GaAs(001) surfaces observed during As4-irradition by scanning   tunneling microscopy",
    "url": "https://arxiv.org/abs/physics/0202013"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "fbe97ffc-c796-42a1-982a-3cedd05513f2",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}