dorsal/arxiv
View SchemaRole of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors
| Authors | Sorina Lazanu, Ionel Lazanu |
|---|---|
| Categories | |
| ArXiv ID | physics/0310032 |
| URL | https://arxiv.org/abs/physics/0310032 |
| Journal | J.Optoelectron.Adv.Mat. 5 (2003) 647-652 |
Abstract
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next generation of accelerators as Super-LHC) is investigated in the frame of the quantitative model developed previously by the authors. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy and interstitial impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: VP, VO, V_2, V_2O, C_i, C_iO_i and C_iC_s is studied. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators, for space missions or for industrial applications.
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"abstract": "The influence of oxygen and carbon impurities on the concentrations of\ndefects in silicon for detector uses, in complex fields of radiation (proton\ncosmic field at low orbits around the Earth, at Large Hadron Collider and at\nthe next generation of accelerators as Super-LHC) is investigated in the frame\nof the quantitative model developed previously by the authors. The generation\nrate of primary defects is calculated starting from the projectile - silicon\ninteraction and from recoil energy redistribution in the lattice. The\nmechanisms of formation of complex defects are explicitly analysed.\nVacancy-interstitial annihilation, interstitial and vacancy migration to sinks,\ndivacancy, vacancy and interstitial impurity complex formation and\ndecomposition are considered. Oxygen and carbon impurities present in silicon\ncould monitor the concentration of all stable defects, due to their interaction\nwith vacancies and interstitials. Their role in the mechanisms of formation and\ndecomposition of the following stable defects: VP, VO, V_2, V_2O, C_i, C_iO_i\nand C_iC_s is studied. The model predictions could be a useful clue in\nobtaining harder materials for detectors at the new generation of accelerators,\nfor space missions or for industrial applications.",
"arxiv_id": "physics/0310032",
"authors": [
"Sorina Lazanu",
"Ionel Lazanu"
],
"categories": [
"physics.ins-det",
"hep-ph"
],
"journal_ref": "J.Optoelectron.Adv.Mat. 5 (2003) 647-652",
"title": "Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors",
"url": "https://arxiv.org/abs/physics/0310032"
},
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