dorsal/arxiv
View SchemaModelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
| Authors | Sorina Lazanu, Ionel Lazanu |
|---|---|
| Categories | |
| ArXiv ID | physics/0611194 |
| URL | https://arxiv.org/abs/physics/0611194 |
| DOI | 10.1016/j.nima.2007.08.206 |
| Journal | Nucl.Instrum.Meth.A583:165-168,2007 |
Abstract
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.
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"abstract": "The irradiation represents a useful tool for determining the characteristics\nof defects in semiconductors as well as a method to evaluate their degradation,\nfact with important technological consequences. In this contribution, starting\nfrom available data on the degradation of silicon detector characteristics in\nradiation fields, these effects are explained in the frame of a model that\nsupposes also the production of the SiFFCD defect due to irradiation. The\ndisplacement threshold energies - different for different crystallographic\naxes, considered as parameters of the model, are established and the results\nobtained could contribute to clarify these controversial aspects. Predictions\nof the degradation of electrical parameters (leakage current, effective carrier\nconcentration and effective trapping probabilities for electrons and holes) of\nDOFZ silicon detectors in the hadron background of the LHC accelerator,\nsupposing operation at -10 grdC are done. The non uniformity of the rate of\nproduction of primary defects and of complexes, as a function of depth, for\nincident particles with low kinetic energy was obtained by simulations in some\nparticular and very simplifying assumptions, suggesting the possible important\ncontribution of the low energy component of the background spectra to detector\ndegradation.",
"arxiv_id": "physics/0611194",
"authors": [
"Sorina Lazanu",
"Ionel Lazanu"
],
"categories": [
"physics.ins-det"
],
"doi": "10.1016/j.nima.2007.08.206",
"journal_ref": "Nucl.Instrum.Meth.A583:165-168,2007",
"title": "Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity",
"url": "https://arxiv.org/abs/physics/0611194"
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