{
  "annotation_id": "119ae95d-0a78-4df5-ab81-1f24148a527a",
  "date_created": "2026-03-02T18:00:50.372000Z",
  "date_modified": "2026-03-02T18:00:50.372000Z",
  "file_hash": "f428eedad8a5eaad21b8e64ed150c2f45a7be181fa26598c34cb81f3101edb3e",
  "private": false,
  "record": {
    "abstract": "With a two-dimensional (2D) optical mask, nanoscale patterns are created for\nthe first time in an atom lithography process using metastable helium atoms.\nThe internal energy of the atoms is used to locally damage a hydrofobic resist\nlayer, which is removed in a wet etching process. Experiments have been\nperformed with several polarizations for the optical mask, resulting in\ndifferent intensity patterns, and corresponding nanoscale structures. The\nresults for a linear polarized light field show an array of holes with a\ndiameter of 260 nm, in agreement with a computed pattern. With a circularly\npolarized light field a line pattern is observed with a spacing of 766 nm.\nSimulations taking into account many possible experimental imperfections can\nnot explain this pattern.",
    "arxiv_id": "physics/0402127",
    "authors": [
      "S. J. H. Petra",
      "K. A. H. van Leeuwen",
      "L. Feenstra",
      "W. Hogervorst",
      "W. Vassen"
    ],
    "categories": [
      "physics.atom-ph"
    ],
    "doi": "10.1007/s00340-004-1569-4",
    "journal_ref": "Appl. Phys. B 79 (3), 279-283 (2004)",
    "title": "Atom lithography with two-dimensional optical masks",
    "url": "https://arxiv.org/abs/physics/0402127"
  },
  "schema_id": "dorsal/arxiv",
  "source": {
    "execution_id": "e8fb1a94-0be4-4821-aff4-bdc0f0ecab7a",
    "id": "arXiv Dataset IDs",
    "type": "Model",
    "variant": "snapshot-2026-03-01",
    "version": "0.1.0"
  },
  "user_id": 1000002
}